DMN2028UFDH-7
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Краткое описание:
20V 6.8A N-Ch MOSFET, 20mΩ Rds(on), 2-Element, SMT
Дополнительная информация
N-Channel Power MOSFET featuring 20V drain-source voltage and 6.8A continuous drain current. Offers low 16mΩ drain-to-source resistance for efficient power handling. Designed with a 3.05mm x 3.05mm x 0.8mm POWERDI3030-8 surface-mount package. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.1W. Includes fast switching characteristics with a 53ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 0.8mm |
| Length | 3.05mm |
| Series | Automotive, AEC-Q101 |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 234ns |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 151pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 53ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 561ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 16mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 6.8A |
| Drain to Source Voltage (Vdss) | 20V |
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