DMN2041LSD-13
Производится
Увеличить
Краткое описание:
N-CH MOSFET 20V 7.63A 8-Pin SO Dual Drain
Дополнительная информация
N-channel Power MOSFET featuring dual dual drain configuration. 20V maximum drain-source voltage and 7.63A continuous drain current. Surface mountable in an 8-pin SO package with gull-wing leads. Low gate threshold voltage of 1.2V and 28mOhm drain-source resistance at 4.5V gate-source voltage. Operates from -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | MS-012AA |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 6M0U4 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | SO |
| AEC Qualified | No |
| Configuration | Dual Dual Drain |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 3.9 |
| Package Description | Small Outline IC |
| Package Family Name | SOP |
| Package Height (mm) | 1.45 |
| Package Length (mm) | 4.9 |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1160mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 15.6nC |
| Typical Gate Charge @ Vgs | 15.6@10V|[email protected]nC |
| Maximum Gate Source Voltage | ±12V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Threshold Voltage | 1.2V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Input Capacitance @ Vds | 550@10VpF |
| Maximum Continuous Drain Current | 7.63A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
