DMN2050L-7
Производится
Увеличить
Краткое описание:
N-Channel MOSFET, 20V, 5.9A, 29mR Rds On, SOT-23-3
Дополнительная информация
N-Channel MOSFET, 20V Drain-Source Voltage (Vdss), 5.9A Continuous Drain Current (ID), and 29mΩ Drain-Source On-Resistance (Rds On). This single-element, silicon Metal-Oxide-Semiconductor FET features a low 1.4W power dissipation and operates within a temperature range of -55°C to 150°C. Packaged in a compact SOT-23-3 surface-mount plastic housing, it is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 1mm |
| Length | 2.9mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 29mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 532pF |
| Power Dissipation | 1.4W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 29mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 5.9A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 29MR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
