DMN2065UW-7
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N-Channel JFET, 20V, 2.8A ID, 56mR Rds(on), SOT-323
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET for small signal applications. Features a 20V Drain to Source Voltage (Vdss) and 2.8A Continuous Drain Current (ID). Offers low Drain to Source Resistance (Rds On Max) of 56mR and a Threshold Voltage of 1V. Packaged in a 3-pin SOT-323 surface mount plastic package, this component operates from -55°C to 150°C. Includes fast switching characteristics with Turn-On Delay Time of 3.5ns and Fall Time of 7.2ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Weight | 0.000212oz |
| Polarity | N-CHANNEL |
| Fall Time | 7.2ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 56mR |
| Package/Case | SOT-323 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 400pF |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 3.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23.8ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 430mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 140mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 2.8A |
| Drain to Source Voltage (Vdss) | 20V |
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