DMN2075U-7
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Краткое описание:
N-Channel JFET, 20V, 4.2A ID, SOT-23-3, Surface Mount
Дополнительная информация
N-Channel Silicon Metal-Oxide Semiconductor FET, 1-Element, Surface Mount Transistor. Features 20V Drain-Source Voltage (Vdss) and 4.2A Continuous Drain Current (ID). Offers low Drain-Source On Resistance (Rds On) up to 38mR. Operates within a temperature range of -55°C to 150°C with a 1V Threshold Voltage. Packaged in a SOT-23-3 plastic package, tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.1mm |
| Length | 3mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 6.7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 38mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 594.3pF |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 7.4ns |
| Turn-Off Delay Time | 28.1ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 800mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 45mR |
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