DMN2100UDM-7
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Краткое описание:
N-Channel JFET, 20V, 3.3A ID, 55mR Rds On, SOT-23-6
Дополнительная информация
N-channel silicon MOSFET featuring a 20V drain-source voltage and 3.3A continuous drain current. This surface-mount transistor offers a low 55mΩ drain-to-source resistance (Rds On) and a maximum power dissipation of 1W. It operates across a wide temperature range from -55°C to 150°C. The device is packaged in a compact SOT-23-6 plastic package, suitable for tape and reel automation. Key switching characteristics include a 53ns turn-on delay and a 234ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 1.1mm |
| Length | 3mm |
| Polarity | N-CHANNEL |
| Fall Time | 234ns |
| Packaging | Tape and Reel |
| Rds On Max | 55mR |
| Package/Case | SOT-23-6 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 555pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 53ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 561ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 55mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 3.3A |
| Drain to Source Voltage (Vdss) | 20V |
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