DMN2112SN-7
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Краткое описание:
N-Channel MOSFET, 20V, 1.2A, 100mR Rds(on), SC-59, SMT
Дополнительная информация
N-channel silicon Metal-oxide Semiconductor FET, 1.2A continuous drain current, 20V drain-to-source breakdown voltage, and 100mΩ drain-to-source resistance. This single-element JFET features a 1.2V nominal gate-to-source voltage and a 1.2V threshold voltage. Operating across a -55°C to 150°C temperature range, it offers a 65ns fall time and 10ns turn-on delay. Packaged in a 3-pin SC-59 surface-mount plastic case, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.7mm |
| Height | 1.3mm |
| Length | 3.1mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 65ns |
| Packaging | Tape and Reel |
| Rds On Max | 100mR |
| Nominal Vgs | 1.2V |
| Termination | SMD/SMT |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 220pF |
| Threshold Voltage | 1.2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 10ns |
| Dual Supply Voltage | 20V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 75ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 500mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 100mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 1.2A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | 20V |
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