DMN2215UDM-7
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Краткое описание:
2-Ch N-Ch JFET, 20V, 2A ID, 165mR RdsOn, SOT-26
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, 20V Drain-Source Voltage, 2A Continuous Drain Current, 165mΩ Drain-to-Source Resistance, and 100mΩ Rds On Max. This surface mount transistor features a 2-element N-channel configuration with a 12V Gate-to-Source Voltage. Operating across a temperature range of -55°C to 150°C, it offers a maximum power dissipation of 650mW. Packaged in a SOT-26 plastic package, it is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 1.1mm |
| Length | 3mm |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 3.8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 100mR |
| Package/Case | SOT-26 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 188pF |
| Power Dissipation | 650mW |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 8ns |
| Turn-Off Delay Time | 19.6ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 650mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 165mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 20V |
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