DMN2230U-7
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N-Channel JFET, 20V, 2A, 110mR Rds(on), SOT-23-3
Дополнительная информация
N-Channel Silicon Metal-Oxide Semiconductor FET for surface mount applications. Features 2A continuous drain current (ID) and 20V drain-to-source voltage (Vdss). Offers 110mΩ drain-to-source resistance (Rds On Max) and 188pF input capacitance. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 600mW. Packaged in a 3-lead SOT-23 plastic package, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 1mm |
| Length | 2.9mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 3.8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 110mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 188pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19.6ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 600mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 110mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 20V |
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