DMN2250UFB-7B
Производится
Увеличить
Краткое описание:
N-Channel JFET, 20V, 1.35A ID, 170mR Rds(on), DFN
Дополнительная информация
N-Channel Junction Field-Effect Transistor (JFET) for small signal applications. Features a 20V Drain to Source Voltage (Vdss) and 1.35A Continuous Drain Current (ID). Offers a low Drain to Source Resistance (Rds On) of 170mR. Operates with a Gate to Source Voltage (Vgs) of 8V and includes fast switching times with a 4.3ns Turn-On Delay Time. Packaged in a compact X1-DFN1006-3 (DFN) surface mount package with dimensions of 1.08mm (L) x 0.675mm (W) x 0.48mm (H).
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.675mm |
| Height | 0.48mm |
| Length | 1.08mm |
| FET Type | 1 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 25.4ns |
| Packaging | Tape and Reel |
| Rds On Max | 170mR |
| Package/Case | DFN |
| RoHS Compliant | Yes |
| Package Quantity | 10000 |
| Input Capacitance | 94pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 4.3ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 59.4ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 500mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 170mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 1.35A |
| Drain to Source Voltage (Vdss) | 20V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
