DMN2400UFB-7
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N-Channel JFET, 20V, 750mA, 550mR Rds(on), DFN
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET for surface mount applications. Features 20V Drain to Source Voltage (Vdss) and 750mA Continuous Drain Current (ID). Offers 550mR Drain to Source Resistance (Rds On Max) and 36pF Input Capacitance. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 470mW. Packaged in an ultra-small DFN (X1-DFN1006-3) with 3 pins, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.675mm |
| Height | 0.48mm |
| Length | 1.08mm |
| FET Type | 1 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 9.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 550mR |
| Package/Case | DFN |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 36pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 4.11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14.8ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 470mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 550mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 750mA |
| Drain to Source Voltage (Vdss) | 20V |
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