DMN2501UFB4-7
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Краткое описание:
N-CH MOSFET 20V 1.5A X2-DFN SMT
Дополнительная информация
N-channel enhancement mode power MOSFET, surface mount, X2-DFN package with 3 pins. Features 20V maximum drain-source voltage, 1.5A maximum continuous drain current, and 400mΩ maximum drain-source resistance at 4.5V. Operates from -55°C to 150°C with a maximum power dissipation of 1200mW.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 6M0U4 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | No Lead |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | X2-DFN |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Material | Plastic |
| Basic Package Type | Non-Lead-Frame SMT |
| Package Width (mm) | 1 |
| Package Family Name | DFN |
| Package Height (mm) | 0.35(Max) |
| Package Length (mm) | 0.6 |
| Seated Plane Height (mm) | 0.4(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1200mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 2nC |
| Typical Gate Charge @ Vgs | [email protected]|2@10VnC |
| Maximum Gate Source Voltage | ±8V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Input Capacitance @ Vds | 82@16VpF |
| Maximum Continuous Drain Current | 1.5A |
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