DMN2600UFB-7
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Краткое описание:
Small Signal Field-Effect Transistor, 1.3A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC, DFN1006-3, 3 PIN
Дополнительная информация
Small Signal Field-Effect Transistor, 1.3A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC, DFN1006-3, 3 PIN
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | N-CHANNEL |
| Fall Time | 20.9ns |
| Packaging | Tape and Reel |
| Rds On Max | 350mR |
| Package/Case | DFN |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 70.13pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 4.1ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 34.8ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 540mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 600mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 1.3A |
| Drain to Source Voltage (Vdss) | 25V |
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