DMN26D0UFB4-7

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DMN26D0UFB4-7 - Diodes
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Краткое описание: N-Channel JFET, 20V, 240mA ID, 1.8R Rds(on), DFN Surface Mount
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel JFET, designed for small signal applications. Features a 20V drain-source voltage (Vdss) and a continuous drain current (ID) of 240mA. Offers a low drain-source on-resistance (Rds On) of 1.8 Ohms. Packaged in an ultra-small DFN1006H4-3 (3-pin) surface-mount package, measuring 1.05mm x 0.65mm x 0.35mm. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 350mW. This component is RoHS and REACH SVHC compliant.
RoHS Compliant
Mount Surface Mount
Width 0.65mm
Height 0.35mm
Length 1.05mm
FET Type 1 N-Channel
Polarity N-CHANNEL
Fall Time 15.2ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 3R
Package/Case DFN
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 14.1pF
Power Dissipation 350mW
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 3.8ns
Radiation Hardening No
Turn-Off Delay Time 13.4ns
Reach SVHC Compliant Yes
Max Power Dissipation 350mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 1.8R
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 240mA
Drain to Source Voltage (Vdss) 20V
Drain-source On Resistance-Max 10R

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