DMN3018SSS-13
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Краткое описание:
N-Channel MOSFET, 30V, 7.3A ID, 21mR Rds On, SOIC
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, 30V Drain-to-Source Voltage (Vdss), 7.3A Continuous Drain Current (ID), and 35mΩ Drain-to-Source Resistance. Features include a 4.3ns turn-on delay, 4.1ns fall time, and 20.1ns turn-off delay. This surface-mount device is packaged in an SOIC case, measuring 4.95mm in length, 3.95mm in width, and 1.5mm in height. Operates from -55°C to 150°C, with a maximum power dissipation of 1.7W. RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.95mm |
| Height | 1.5mm |
| Length | 4.95mm |
| Weight | 0.00261oz |
| Polarity | N-CHANNEL |
| Fall Time | 4.1ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 21mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 697pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 4.3ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20.1ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 7.3A |
| Drain to Source Voltage (Vdss) | 30V |
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