DMN3024LSS-13
Производится
Увеличить
Краткое описание:
N-Channel MOSFET, 30V, 8.5A ID, 24mR Rds(on), SOIC
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET for surface mount applications. Features 30V Drain to Source Breakdown Voltage (Vdss) and 30V Gate to Source Voltage (Vgs). Offers a low 24mR Drain to Source Resistance (Rds On Max) and 8.5A Continuous Drain Current (ID). Includes fast switching characteristics with a 2.9ns Turn-On Delay Time and 8ns Fall Time. Operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Weight | 0.00261oz |
| FET Type | 1 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 24mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 608pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 2.9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 16ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 24mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
