DMN3030LFG-13
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Краткое описание:
N-CH MOSFET 30V 8.6A PowerDI EP 8-Pin SMT
Дополнительная информация
N-channel enhancement mode Power MOSFET featuring a 30V drain-source voltage and 8.6A continuous drain current. This single MOSFET offers a low drain-source on-resistance of 18mΩ at 10V Vgs. Housed in an 8-pin PowerDI EP package with a 3.3mm x 3.3mm footprint, it supports surface mounting and boasts a typical gate charge of 17.4nC at 10V. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 2300mW.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 6M0U4 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | PowerDI EP |
| AEC Qualified | No |
| Configuration | Single Quad Drain Triple Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Basic Package Type | Non-Lead-Frame SMT |
| Package Width (mm) | 3.3 |
| Package Family Name | PowerDI |
| Package Height (mm) | 0.8 |
| Package Length (mm) | 3.3 |
| Seated Plane Height (mm) | 0.82 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2300mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 17.4nC |
| Typical Gate Charge @ Vgs | 17.4@10V|[email protected]nC |
| Maximum Gate Source Voltage | ±25V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Threshold Voltage | 2.1V |
| Maximum Drain Source Resistance | 18@10VmOhm |
| Typical Input Capacitance @ Vds | 751@10VpF |
| Maximum Continuous Drain Current | 8.6A |
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