DMN3033LSD-13
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N-Channel MOSFET, 30V, 6.9A, 22mR, SOP, 2-Element
Дополнительная информация
N-Channel Power MOSFET, 30V Drain-Source Voltage, 6.9A Continuous Drain Current, and 22mΩ Max Drain-Source On-Resistance. This dual-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor features a 2-element N-Channel configuration, a 20V Gate-to-Source Voltage, and a 150°C Max Operating Temperature. Packaged in a surface-mount SOP with dimensions of 5.3mm length, 4.1mm width, and 1.5mm height, it offers a 2W Max Power Dissipation and is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4.1mm |
| Height | 1.5mm |
| Length | 5.3mm |
| Weight | 0.030018oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| Package/Case | SOP |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 725pF |
| Power Dissipation | 2W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 63ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 22mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 22mR |
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