DMN3052L-7
Снят с производства
Увеличить
Краткое описание:
N-Channel MOSFET, 30V, 5.4A, 32mR, SOT-23-3
Дополнительная информация
N-Channel MOSFET, 30V Drain-Source Voltage, 5.4A Continuous Drain Current, and 32mΩ Drain-Source On-Resistance. This silicon Metal-Oxide Semiconductor FET features a single element and is housed in a 3-pin SOT-23-3 surface-mount plastic package. With a maximum power dissipation of 1.4W and an operating temperature range of -55°C to 150°C, it offers a 12V Gate-Source Voltage rating and 555pF input capacitance. This component is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 1mm |
| Length | 2.9mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 32mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 555pF |
| Power Dissipation | 1.4W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 32mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 5.4A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 32MR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
