DMN3200U-7
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Краткое описание:
N-Channel JFET, 30V, 2.2A ID, 90mR RdsOn, SOT-23-3
Дополнительная информация
N-Channel Silicon Metal-Oxide Semiconductor FET, a single-element JFET designed for surface mounting in a SOT-23-3 package. Features a continuous drain current of 2.2A, a drain-to-source voltage of 30V, and a low drain-to-source resistance of 90mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 650mW. Input capacitance is 290pF, and the device is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 1mm |
| Length | 2.9mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Packaging | Tape and Reel |
| Rds On Max | 90mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 290pF |
| Number of Channels | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 650mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 90mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Voltage (Vdss) | 30V |
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