DMN32D2LFB4-7
Производится
Увеличить
Краткое описание:
N-Channel JFET, 30V, 300mA ID, 1.2R Rds(on), DFN
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, a surface mount JFET with 30V drain-source voltage and 300mA continuous drain current. Features 1.2Ω drain-source on-resistance and 39pF input capacitance. Operates from -55°C to 150°C with 350mW power dissipation. Packaged in an ultra-small DFN1006H4, 3-pin plastic package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.6mm |
| Height | 0.35mm |
| Length | 1mm |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.2R |
| Package/Case | DFN |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 39pF |
| Power Dissipation | 350mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 51ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 350mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.2R |
| Gate to Source Voltage (Vgs) | 10V |
| Continuous Drain Current (ID) | 300mA |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 1.2R |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
