DMN3300U-7
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N-Channel JFET, 30V, 2A ID, 150mR Rds(on), SOT-23-3
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET for small signal applications. Features 30V Drain to Source Voltage (Vdss) and 2A Continuous Drain Current (ID). Offers low Drain to Source Resistance (Rds On) of 150mR. Operates with a Gate to Source Voltage (Vgs) up to 12V and boasts fast switching times with a 7ns Turn-On Delay Time and 24ns Fall Time. Packaged in a compact SOT-23-3 surface mount plastic package, this RoHS and REACH SVHC compliant component is ideal for various electronic designs.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 1mm |
| Length | 2.9mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 24ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 150mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 193pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 24ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 700mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 150mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 30V |
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