DMN3730UFB4-7
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N-Channel JFET, 30V, 910mA ID, 460mR Rds On, DFN
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET designed for surface mounting in a DFN package. Features a 30V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 910mA. Offers a low drain-to-source resistance (Rds On Max) of 460mR. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 470mW. Includes fast switching characteristics with turn-on delay time of 3.5ns and fall time of 13ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.675mm |
| Height | 0.35mm |
| Length | 1.08mm |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 460mR |
| Package/Case | DFN |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 64.3pF |
| Threshold Voltage | 450mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 3.5ns |
| Turn-Off Delay Time | 38ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 470mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 460mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 910mA |
| Drain to Source Voltage (Vdss) | 30V |
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