DMN4027SSD-13
Производится
Увеличить
Краткое описание:
N-Channel MOSFET, 40V, 5.4A ID, 27mR Rds(on), SOIC
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, Surface Mount, SOIC package. Features 40V Drain to Source Voltage (Vdss), 5.4A Continuous Drain Current (ID), and 27mΩ Drain to Source Resistance (Rds On Max). Operates with a Gate to Source Voltage (Vgs) up to 20V, offering fast switching with a 3.1ns Turn-On Delay Time and 7.5ns Fall Time. Maximum Power Dissipation is 1.8W, with operating temperatures from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Weight | 0.00261oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 7.5ns |
| Packaging | Tape and Reel |
| Rds On Max | 27mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 604pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 3.1ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15.4ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 27mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.4A |
| Drain to Source Voltage (Vdss) | 40V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
