DMN4034SSD-13
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Краткое описание:
N-Channel JFET, 40V, 4.8A ID, 34mR Rds On, SOP-8
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, Surface Mount, SOIC package. Features 40V Drain to Source Voltage (Vdss), 4.8A Continuous Drain Current (ID), and 34mR Drain to Source Resistance (Rds On Max). Operates from -55°C to 150°C with a Max Power Dissipation of 1.8W. Includes 2.7ns Turn-On Delay Time and 6ns Fall Time. RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Weight | 0.00261oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 34mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 453pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 2.7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 34mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.8A |
| Drain to Source Voltage (Vdss) | 40V |
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