DMN5L06K-7
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Краткое описание:
N-Channel JFET, 50V, 300mA, 2Ω Rds(on), SOT-23
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET (MOSFET) for small signal applications. Features a 50V drain-source voltage (Vdss) and 300mA continuous drain current (ID). Offers a low drain-source on-resistance (Rds On) of 2 Ohms. Operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 350mW. Packaged in a 3-pin SOT-23 surface-mount plastic package, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 1mm |
| Length | 2.9mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2R |
| Package/Case | SOT-23 |
| Current Rating | 300mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 3000 |
| Input Capacitance | 50pF |
| Power Dissipation | 350mW |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 350mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 2R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 300mA |
| Drain to Source Voltage (Vdss) | 50V |
| Drain-source On Resistance-Max | 2R |
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