DMN601DWK-7
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Краткое описание:
60V N-Channel JFET, 305mA ID, 2R Rds(on), SOT-363
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, Surface Mount, SOT-363 package. Features 60V Drain to Source Voltage (Vdss), 305mA Continuous Drain Current (ID), and 2 Ohm Drain-source On Resistance-Max. Operates within a temperature range of -65°C to 150°C with a Max Power Dissipation of 200mW. This RoHS compliant component offers a 1.6V Threshold Voltage and 50pF Input Capacitance.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Weight | 0.000212oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2R |
| Nominal Vgs | 1.6V |
| Termination | SMD/SMT |
| Package/Case | SOT-363 |
| Current Rating | 305mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 3000 |
| Input Capacitance | 50pF |
| Threshold Voltage | 1.6V |
| Number of Channels | 2 |
| Dual Supply Voltage | 60V |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 200mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 3R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 305mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 2R |
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