DMN6040SK3-13
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Краткое описание:
N-Channel MOSFET, 60V, 20A, 40mΩ, TO-252
Дополнительная информация
N-Channel Power MOSFET, 60V Drain-Source Voltage, 20A Continuous Drain Current, and 40mΩ Max Drain-Source On-Resistance. This single-element silicon FET features a TO-252-3 surface-mount package, 1.287nF input capacitance, and 42W max power dissipation. Optimized for performance with a 6.6ns turn-on delay and 20.1ns turn-off delay, it operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.39mm |
| Length | 6.7mm |
| Weight | 0.139332oz |
| FET Type | 1 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 40mR |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 1.287nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 6.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20.1ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 42W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 30mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 60V |
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