DMN6040SSD-13
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Краткое описание:
N-CH MOSFET 60V 5A Dual Drain SO-8
Дополнительная информация
N-channel Power MOSFET, dual dual drain configuration, featuring 60V drain-source voltage and 5A continuous drain current. This surface-mount component utilizes an 8-pin SO package with gull-wing leads, measuring 4.9mm x 3.9mm x 1.45mm. Key electrical characteristics include a maximum gate threshold voltage of 3V and a low drain-source on-resistance of 40mOhm at 10V. Operating temperature range spans from -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 6M0U4 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | SO |
| AEC Qualified | No |
| Configuration | Dual Dual Drain |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 1.27 |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 3.9 |
| Package Description | Small Outline IC |
| Package Family Name | SOP |
| Package Height (mm) | 1.45 |
| Package Length (mm) | 4.9 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1700mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 22.4nC |
| Typical Gate Charge @ Vgs | 22.4@10V|[email protected]nC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Drain Source Resistance | 40@10VmOhm |
| Typical Input Capacitance @ Vds | 1287@25VpF |
| Maximum Continuous Drain Current | 5A |
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