DMN6040SSS-13
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Краткое описание:
N-CH MOSFET, 60V, 5.5A, 8-Pin SO, Surface Mount
Дополнительная информация
N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 5.5A continuous drain current. This single MOSFET offers a low 40mΩ drain-source resistance at 10V Vgs. Housed in an 8-pin SO (Small Outline IC) package with gull-wing leads, it supports surface mounting. Key specifications include a maximum gate-source voltage of ±20V and a maximum power dissipation of 2000mW.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | MS-012AA |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 6M0U4 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | SO |
| AEC Qualified | No |
| Configuration | Single Quad Drain Triple Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 3.9 |
| Package Description | Small Outline IC |
| Package Family Name | SOP |
| Package Height (mm) | 1.45 |
| Package Length (mm) | 4.9 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 22.4nC |
| Typical Gate Charge @ Vgs | 22.4@10V|[email protected]nC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Drain Source Resistance | 40@10VmOhm |
| Typical Input Capacitance @ Vds | 1287@25VpF |
| Maximum Continuous Drain Current | 5.5A |
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