DMN6066SSS-13
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Краткое описание:
N-Channel MOSFET, 60V, 3.7A ID, 66mR Rds(on), SOIC
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, surface mount, in an SOP-8 package. Features 60V Drain to Source Voltage (Vdss), 3.7A Continuous Drain Current (ID), and 66mR Rds On Max. Operates from -55°C to 150°C with a Max Power Dissipation of 1.56W. Includes 2.7ns Turn-On Delay Time and 5.4ns Fall Time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Weight | 0.00261oz |
| Polarity | N-CHANNEL |
| Fall Time | 5.4ns |
| Packaging | Tape and Reel |
| Rds On Max | 66mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 502pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 2.7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14.7ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.56W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 48mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Voltage (Vdss) | 60V |
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