DMN6068SE-13
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Краткое описание:
N-CH MOSFET 60V 4.1A SOT-223 Power
Дополнительная информация
N-channel enhancement mode power MOSFET in a SOT-223 (TO-261AA) package. Features a 60V drain-source voltage, 4.1A continuous drain current, and low 68mOhm drain-source resistance at 10V. Surface mountable with gull-wing leads, this single dual drain transistor offers a maximum power dissipation of 3700mW and operates from -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-261AA |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 6M0U4 |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | SOT-223 |
| AEC Qualified | No |
| Configuration | Single Dual Drain |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 3.5 |
| Package Description | Small Outline Transistor |
| Package Family Name | SOT |
| Package Height (mm) | 1.6 |
| Package Length (mm) | 6.5 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.65 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 3700mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 10.3nC |
| Typical Gate Charge @ Vgs | [email protected]|10.3@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Drain Source Resistance | 68@10VmOhm |
| Typical Input Capacitance @ Vds | 502@30VpF |
| Maximum Continuous Drain Current | 4.1A |
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