DMN62D1SFB-7B
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Краткое описание:
N-Channel JFET, 60V, 410mA ID, 1.4R Rds(on), DFN
Дополнительная информация
N-Channel Junction Field-Effect Transistor (JFET) for small signal applications. Features 60V drain-to-source voltage (Vdss) and 410mA continuous drain current (ID). Offers low 1.4 Ohm drain-to-source resistance (Rds On Max) and fast switching speeds with turn-on delay of 3.89ns and fall time of 11.96ns. Packaged in an ultra-small DFN1006-3 surface-mount plastic package, this RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | DMN62 |
| FET Type | 1 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 11.96ns |
| Packaging | Tape and Reel |
| Rds On Max | 1.4R |
| Package/Case | DFN |
| RoHS Compliant | Yes |
| Package Quantity | 10000 |
| Input Capacitance | 80pF |
| Power Dissipation | 470mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 3.89ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18.8ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 470mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.4R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 410mA |
| Drain to Source Voltage (Vdss) | 60V |
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