DMN63D8LDW-7
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Краткое описание:
N-Channel JFET, 30V, 260mA, 2.8 Ohm, SOT-363
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, Surface Mount transistor with a 30V Drain to Source Voltage (Vdss) and 260mA Continuous Drain Current (ID). Features a 2.8 Ohm Drain to Source Resistance (Rds On Max) and a 1.5V Threshold Voltage. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW. Packaged in a SOT-363, tape and reel for surface mounting.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Weight | 0.000212oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 6.3ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.8R |
| Package/Case | SOT-363 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 22pF |
| Power Dissipation | 400mW |
| Threshold Voltage | 1.5V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 3.3ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 300mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.8R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 260mA |
| Drain to Source Voltage (Vdss) | 30V |
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