DMN63D8LV-7
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N-Ch MOSFET, 30V, 260mA, 2.8R Rds(on), SOT-563
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, 2-element configuration, designed for surface mounting in a compact SOT-563 plastic package. Features a continuous drain current of 260mA and a drain-to-source breakdown voltage of 30V. Offers a low drain-to-source resistance (Rds On Max) of 2.8 Ohms and a typical input capacitance of 22pF. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 450mW. This RoHS compliant component exhibits fast switching characteristics with a turn-on delay time of 3.3ns and a fall time of 6.3ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 0.6mm |
| Length | 1.7mm |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 6.3ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.8R |
| Package/Case | SOT-563 |
| RoHS Compliant | Yes |
| Input Capacitance | 22pF |
| Power Dissipation | 450mW |
| Threshold Voltage | 1.5V |
| Turn-On Delay Time | 3.3ns |
| Turn-Off Delay Time | 12ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 450mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.2R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 260mA |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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