DMN65D8L-7

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DMN65D8L-7 - Diodes
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Краткое описание: N-CH MOSFET 60V 0.31A SOT-23
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel enhancement mode MOSFET, 60V drain-source voltage, 0.31A continuous drain current. Features 3000mOhm maximum drain-source resistance at 10V and a 2V maximum gate threshold voltage. Packaged in a 3-pin SOT-23 (TO-236AA) lead-frame SMT with gull-wing leads, suitable for surface mounting. Operating temperature range from -55°C to 150°C.
PCB 3
ECCN EAR99
PPAP No
Jedec TO-236AA
EU RoHS Yes
Category Small Signal
HTS Code 8541210095
Mounting Surface Mount
Cage Code 6M0U4
Pin Count 3
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Channel Mode Enhancement
Channel Type N
Package/Case SOT-23
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.92
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 1.3
Package Description Small Outline Transistor
Package Family Name SOT-23
Package Height (mm) 0.98
Package Length (mm) 2.9
Seated Plane Height (mm) 1.03
Max Operating Temperature 150°C
Maximum Power Dissipation 540mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 0.87nC
Typical Gate Charge @ Vgs 0.87@10V|[email protected]nC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 60V
Maximum Gate Threshold Voltage 2V
Maximum Drain Source Resistance 3000@10VmOhm
Typical Input Capacitance @ Vds 22@25VpF
Maximum Continuous Drain Current 0.31A

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