DMN66D0LDW-7
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Краткое описание:
N-Channel JFET, 60V, 115mA ID, 6Ω Rds On, SOT-363
Дополнительная информация
N-Channel Silicon Metal-Oxide Semiconductor FET, a 2-element JFET designed for surface mounting. Features 60V drain-to-source voltage (Vdss) and 115mA continuous drain current (ID). Offers a low 6 Ohm drain-to-source resistance (Rds On Max). Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 250mW. Packaged in a compact SOT-363 plastic package, suitable for tape and reel deployment.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Series | Automotive, AEC-Q101 |
| Weight | 0.000212oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6R |
| Package/Case | SOT-363 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 23pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 33ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 250mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 115mA |
| Drain to Source Voltage (Vdss) | 60V |
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