DMP2004DWK-7
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Краткое описание:
P-Channel JFET, 20V, 430mA ID, 900mR Rds On, SOT-363
Дополнительная информация
P-Channel JFET, 2-element, silicon, metal-oxide semiconductor FET for surface mount applications. Features 20V drain-source voltage (Vdss), 430mA continuous drain current (ID), and 900mR drain-source on resistance (Rds On Max). Operates from -65°C to 150°C with a maximum power dissipation of 250mW. Packaged in a 1mm height SOT-363 plastic package, this component is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Weight | 0.000212oz |
| Polarity | P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 900mR |
| Package/Case | SOT-363 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 175pF |
| Number of Channels | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 250mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 900mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 430mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 900mR |
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