DMP2004VK-7
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Краткое описание:
P-Channel JFET, 20V, 530mA ID, 900mR Rds(on), SOT-563
Дополнительная информация
P-Channel, Silicon, Metal-oxide Semiconductor FET, 2-Element, Surface Mount transistor with a 20V Drain-Source Voltage (Vdss) and 530mA Continuous Drain Current (ID). Features a maximum Drain-Source On Resistance (Rds On) of 900mR and a Gate-to-Source Voltage (Vgs) of 8V. Operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 400mW. Packaged in a compact SOT-563 plastic package, this component is Lead Free, RoHS Compliant, and REACH SVHC Compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.2mm |
| Height | 0.6mm |
| Length | 1.6mm |
| Weight | 0.000106oz |
| Polarity | P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 900mR |
| Package/Case | SOT-563 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 175pF |
| Number of Channels | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 400mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 900mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 530mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 900mR |
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