DMP2035UVT-7
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Краткое описание:
P-Channel MOSFET, 20V, 6A, 35mR, SOT-23-6
Дополнительная информация
P-channel MOSFET, 20V Drain-Source Voltage (Vdss), 6A Continuous Drain Current (ID), and 35mΩ maximum Drain-Source On-Resistance (Rds On). Features include 1.2W maximum power dissipation, 17ns turn-on delay, 42ns fall time, and 94ns turn-off delay. This silicon, metal-oxide semiconductor FET is housed in a 6-pin TSOT26 surface-mount package, measuring 2.9mm x 1.6mm x 0.9mm. Operating temperature range is -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 0.9mm |
| Length | 2.9mm |
| Polarity | P-CHANNEL |
| Fall Time | 42ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 35mR |
| Package/Case | SOT-23-6 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.4nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 94ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 35mR |
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