DMP2066LDM-7
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Краткое описание:
P-Channel MOSFET, 20V, 4.6A, 40mR, SOT-26
Дополнительная информация
P-channel MOSFET with a continuous drain current of 4.6A and a drain-source voltage of -20V. Features a low drain-source on-resistance of 40mΩ at a gate-source voltage of 12V. This silicon, metal-oxide semiconductor FET offers a maximum power dissipation of 1.25W and operates within a temperature range of -55°C to 150°C. Packaged in a 6-pin SOT-26 for surface mounting, it is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 1.1mm |
| Length | 3mm |
| Polarity | P-CHANNEL |
| Fall Time | 9.9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 40mR |
| Package/Case | SOT-26 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 820pF |
| Power Dissipation | 1.25W |
| Threshold Voltage | 960mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 4.4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 28ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 40mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 40mR |
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