DMP2100U-7
Производится
Увеличить
Краткое описание:
P-Channel JFET, 20V, 4.3A ID, 38mR Rds On, SOT-23
Дополнительная информация
P-channel, silicon, metal-oxide semiconductor FET for small signal applications. Features a continuous drain current of 4.3A and a drain-to-source voltage of -20V. Offers a low drain-to-source resistance of 38mR at a gate-to-source voltage of 10V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 800mW. Packaged in a 3-pin SOT-23 surface mount plastic package, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.1mm |
| Length | 3mm |
| Weight | 0.000282oz |
| Polarity | P-CHANNEL |
| Fall Time | 423ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 38mR |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 216pF |
| Threshold Voltage | -1.4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 80ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 688ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 800mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 38mR |
| Gate to Source Voltage (Vgs) | 10V |
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Voltage (Vdss) | -20V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
