DMP21D5UFB4-7B
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P-Channel JFET, 20V, 700mA, 970mR Rds(on), DFN
Дополнительная информация
P-Channel JFET for small signal applications, featuring a 20V drain-source voltage (Vdss) and 700mA continuous drain current (ID). This silicon MOSFET offers a low drain-source on-resistance (Rds On) of 970mR, with typical turn-on delay time of 8.5ns and fall time of 19.2ns. Packaged in an ultra-small, 3-pin X2-DFN1006H4-3 surface-mount DFN package, it operates from -55°C to 150°C and is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.65mm |
| Height | 0.35mm |
| Length | 1.05mm |
| Polarity | P-CHANNEL |
| Fall Time | 19.2ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 970mR |
| Package/Case | DFN |
| RoHS Compliant | Yes |
| Package Quantity | 10000 |
| Input Capacitance | 46.1pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 8.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20.2ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 460mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1R |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 700mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 970mR |
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