DMP2215L-7
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Краткое описание:
P-Channel JFET, 2.7A ID, -20V Vdss, 100mR Rds(on), SOT-23
Дополнительная информация
P-channel, silicon, Metal-oxide Semiconductor FET for small signal applications. Features a continuous drain current of 2.7A and a drain-source voltage of -20V. Offers a low drain-source on resistance of 100mR. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 1.08W. Packaged in a 3-pin SOT-23 surface-mount plastic package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 1mm |
| Length | 2.9mm |
| Weight | 0.000282oz |
| Polarity | P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 100mR |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 250pF |
| Power Dissipation | 1.08W |
| Threshold Voltage | -890mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.08W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 100mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 100mR |
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