DMP22D4UFA-7B
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Краткое описание:
P-CH MOSFET 20V 0.33A X2-DFN SMT
Дополнительная информация
P-channel enhancement mode power MOSFET, 20V drain-source voltage, 0.33A continuous drain current. Features a 3-pin X2-DFN surface-mount package with no leads, measuring 0.8mm x 0.6mm x 0.37mm. Offers a maximum gate-source voltage of ±8V and a typical gate threshold voltage of 1V. Maximum drain-source resistance is 1900mOhm at 4.5V, with a typical gate charge of 0.4nC at 4.5V. Maximum power dissipation is 400mW, operating between -55°C and 150°C.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541210095 |
| Mounting | Surface Mount |
| Cage Code | 6M0U4 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | No Lead |
| Schedule B | 8541210080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | X2-DFN |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Material | Plastic |
| Basic Package Type | Non-Lead-Frame SMT |
| Package Width (mm) | 0.6 |
| Package Family Name | DFN |
| Package Height (mm) | 0.37 |
| Package Length (mm) | 0.8 |
| Seated Plane Height (mm) | 0.39 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 400mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Maximum Gate Source Voltage | ±8V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Input Capacitance @ Vds | 28.7@15VpF |
| Maximum Continuous Drain Current | 0.33A |
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