DMP3008SFG-7
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Краткое описание:
P-Channel MOSFET, 30V, 8.6A ID, 17mR Rds On, SMT
Дополнительная информация
P-channel, silicon, metal-oxide semiconductor field-effect transistor (MOSFET) designed for surface mount applications. Features a 30V drain-source voltage (Vdss) and a maximum continuous drain current (ID) of 8.6A. Offers a low drain-source on-resistance (Rds On) of 17mR. Includes a 1-element configuration with a maximum power dissipation of 2.2W and an operating temperature range of -55°C to 150°C. Packaged in a POWERDI3333-8 plastic package, tape and reel supplied.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.35mm |
| Height | 0.85mm |
| Length | 3.35mm |
| Weight | 0.00254oz |
| Polarity | P-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 17mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.23nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 10.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 90ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 2.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.6A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 25mR |
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