DMP3098LSD-13
Производится
Увеличить
Краткое описание:
P-Channel JFET, 30V, 4.4A ID, 65mR Rds(on), SOP
Дополнительная информация
P-channel silicon Metal-oxide Semiconductor FET (MOSFET) for surface mounting in an SOP package. Features a 30V drain-to-source voltage, 4.4A continuous drain current, and a low 65mΩ Rds On. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.8W. Includes 2 elements and 2 channels, with typical fall and turn-on times of 5ns and 6ns respectively.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4.1mm |
| Height | 1.5mm |
| Length | 5.3mm |
| Weight | 0.00261oz |
| Polarity | P-CHANNEL |
| Fall Time | 5ns |
| Packaging | Tape and Reel |
| Rds On Max | 65mR |
| Package/Case | SOP |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 336pF |
| Power Dissipation | 1.8W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 17.6ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 115mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Voltage (Vdss) | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
