DMP3105LVT-7
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Краткое описание:
P-Channel JFET, 30V, 3.9A ID, 75mR RdsOn, TSOT26
Дополнительная информация
P-Channel, Silicon, Metal-oxide Semiconductor FET for small signal applications. Features 30V Drain to Source Voltage (Vdss) and 75mR maximum Drain-source On Resistance (Rds On). Offers a continuous drain current of 3.9A and a Gate to Source Voltage (Vgs) of 12V. This surface mount transistor, housed in a TSOT26 package, boasts a maximum power dissipation of 1.15W and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 9.7ns and fall time of 64ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 0.9mm |
| Length | 2.9mm |
| Polarity | P-CHANNEL |
| Fall Time | 64ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 75mR |
| Package/Case | SOT-23-6 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 839pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 9.7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 269ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.15W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 75mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 75mR |
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