DMP31D0UFB4-7B
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Краткое описание:
P-Channel JFET, 30V, 760mA ID, 450mR Rds(on), DFN
Дополнительная информация
P-channel, single-element silicon JFET designed for small signal applications. Features a 30V drain-source voltage (Vdss) and a continuous drain current (ID) of 760mA. Offers a low drain-source on-resistance (Rds On) of 1 Ohm and a gate-source voltage (Vgs) of 8V. Packaged in a compact X2-DFN1006-3 surface-mount package with dimensions of 1.08mm (L) x 0.675mm (W) x 0.35mm (H). Operates across a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.675mm |
| Height | 0.35mm |
| Length | 1.08mm |
| Polarity | P-CHANNEL |
| Fall Time | 16.6ns |
| Packaging | Tape and Reel |
| Rds On Max | 1R |
| Package/Case | DFN |
| RoHS Compliant | Yes |
| Package Quantity | 10000 |
| Input Capacitance | 76pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 4.98ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35.71ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 460mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 450mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 760mA |
| Drain to Source Voltage (Vdss) | 30V |
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