DMP4047LFDE-7

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DMP4047LFDE-7 - Diodes
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Краткое описание: P-CH MOSFET 40V 6A UDFN EP SMT
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

P-channel enhancement mode power MOSFET, 40V drain-source voltage, 6A continuous drain current. Features 33mOhm maximum drain-source resistance at 10V Vgs. Housed in a 6-pin UDFN EP package with exposed pad, measuring 2x2x0.57mm, suitable for surface mounting. Includes typical gate charge of 23.2nC at 10V and input capacitance of 1382pF at 20V. Maximum power dissipation is 2100mW, operating temperature range from -55°C to 150°C.
PCB 6
ECCN EAR99
PPAP No
EU RoHS Yes
Category Power MOSFET
HTS Code 8541290095
Mounting Surface Mount
Cage Code 6M0U4
Pin Count 6
Automotive No
Lead Shape No Lead
Schedule B 8541290080
Channel Mode Enhancement
Channel Type P
Package/Case UDFN EP
AEC Qualified No
Configuration Single Quad Drain
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.65
Package Material Plastic
Basic Package Type Non-Lead-Frame SMT
Package Width (mm) 2
Package Description Micro Dual Flat Package No Lead, Exposed Pad
Package Family Name DFN
Package Height (mm) 0.57
Package Length (mm) 2
Seated Plane Height (mm) 0.6
Max Operating Temperature 150°C
Maximum Power Dissipation 2100mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 23.2nC
Typical Gate Charge @ Vgs 23.2@10V|[email protected]nC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 40V
Maximum Gate Threshold Voltage 2.2V
Maximum Drain Source Resistance 33@10VmOhm
Typical Input Capacitance @ Vds 1382@20VpF
Maximum Continuous Drain Current 6A

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